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以四异丙醇钛为原料 ,氧气作反应气体 ,高纯氮气作载气 ,采用低压MOCVD法在单晶Si基片上制备出了TiO2 薄膜。研究了基片温度和氧气流量对TiO2 薄膜沉积速率的影响 ,以及基片温度和退火温度对TiO2 薄膜的结构的影响。采用X射线衍射和喇曼光谱对TiO2 薄膜的结构进行分析。实验表明 :基片温度在1 1 0℃～ 2 5 0℃时制备的TiO2 薄膜是非晶态的 ,在 35 0℃～ 5 0 0℃时制备的TiO2 薄膜为锐钛矿和非晶态混杂结构 ,当基片温度超过 6 0 0℃时开始生成金红石。
Using titanium tetraisopropoxide as raw material, oxygen as reaction gas and high purity nitrogen as carrier gas, TiO2 thin films were prepared on single crystal Si substrate by low pressure MOCVD. The effects of substrate temperature and oxygen flow rate on the deposition rate of TiO2 thin films were investigated. The effects of substrate temperature and annealing temperature on the structure of TiO2 thin films were also studied. The structure of TiO2 thin film was analyzed by X-ray diffraction and Raman spectroscopy. The experimental results show that the TiO2 films prepared at the substrate temperature of 110 ~ 250 ℃ are amorphous, and the anatase and amorphous hybrid structures of TiO2 films prepared at 350 ~ 500 ℃ Rutile begins to form when the substrate temperature exceeds 600 ° C.