为了缩短铝诱导法制备大晶粒多晶硅薄膜的退火时间,用射频磁控溅射法在玻璃衬底上沉积了a-Si/SiO2/Al叠层膜,并用两种方法进行变温退火.分析了变温退火工艺对铝诱导晶化过程的影响,着重讨论了退火过程中温度由低温升到高温时不形成小晶粒的机理和条件.研究表明,当退火温度升高时,是否形成小晶粒取决于晶粒半径、耗尽层厚度和相邻晶粒间距三者之间的关系. In order to shorten the annealing time for the preparation of large-grain polycrystalline silicon thin films by aluminum-induced deposition, a-Si / SiO2 / Al laminated films were deposited on the glass substrate by radio-frequency magnetron sputtering and annealed by two methods. The effect of temperature-dependent annealing process on aluminum-induced crystallization was discussed, and the mechanism and conditions of not forming small grains during annealing from low temperature to high temperature were emphatically discussed. The results show that when the annealing temperature increases, Depends on the relationship between the grain radius, depletion layer thickness and adjacent grain spacing.