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本文提出并讨论分析了一种晶体管分流限制饱和TTL电路.该方法采用了双发射极倒相放大管结构,并在第二发射极和输出管集电极之间接入限制饱和回路以加速截止过程.计算和实验表明,电路的平均时延比标准TTL电路降低了一个数量级.晶体管分流电路保留了标准TTL电路的全部优点而无需改变制造工艺,且不必增加电路元件.在同一条制造线上,通过与肖特基限制饱和TTL电路的对比说明,该电路室温时延接近后者,但具有更好的噪声余量和高温性能,而且也更适宜于双极型集成电路制造工艺.
This paper presents and discusses the analysis of a shunt-limited saturated TTL circuit using a dual-emitter, inverting, amplifying tube architecture with a limited-saturation loop between the second emitter and output tube collector to speed up the cutoff process. The calculations and experiments show that the average delay of the circuit is one order of magnitude lower than that of a standard TTL circuit. The transistor shunt circuit retains all the advantages of a standard TTL circuit without changing the manufacturing process and without having to add circuit components. On the same manufacturing line, The comparison with the Schottky-limited saturated TTL circuit shows that the room temperature delay approaches the latter, but with better noise margin and high temperature performance, and is more suitable for bipolar IC manufacturing processes.