di_C/dt缓冲电路中较高的开通电感使IGBT短路特性在两种短路模式下有明显的不同,由于短路开通时集电极-发射极电压的急剧减小,IGBT短路模式一中的特性变得格外重要,而且还引起V_(CE)变陡峭的去饱和过程。本文描述了该失效模式中IGBT特性,并给出了快速检测这种失效的两种备选方案。利用大面积高压压封IGBT模块及单IGBT芯片进行验证测试。 The higher open inductance in the di-C / dt snubber circuit causes a noticeable difference in IGBT short-circuit characteristics between the two short-circuit modes. As a result of the drastically reduced collector-emitter voltage during short-circuit turn-on, the IGBT short- Particularly important, but also caused V_ (CE) steep desaturation process. This article describes the IGBT characteristics of this failure mode and gives two alternatives for quickly detecting this failure. Using a large area of ​​high pressure sealed IGBT modules and single IGBT chip for verification testing.