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用高分辨的背散射-沟道效应测量了180及 350keV Zn注入 Si中的辐射损伤.注入剂量在1× 10~(15)-1× 10~(17)/cm~2范围内.实验表明,非晶层和单晶的界面深度 x_(A-C)随剂量(?)及注入能量E的增加而单调地增加.这些参数之间的变化关系符合直接碰撞导致非晶化模型,即每一个注入离子由于级联碰撞使表面局部的小区域非晶化.随着剂量的增加,这些非晶态的小区相互重叠而形成一无定形层.
The radiation damage at 180 and 350 keV Zn implanted into Si was measured by high resolution backscatter-channel effect at a dose range of 1 × 10 15 to 1 × 10 17 / cm 2. , The interfacial depth x_ (AC) of amorphous layer and single crystal monotonically increases with the increase of dose ()) and implantation energy E. The relationship between these parameters is in accordance with the direct collision leading to the amorphization model, that is, each injection As a result of cascading collisions, the small regions of the surface are amorphized, and as the dose increases, the amorphous cells overlap one another to form an amorphous layer.