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通过应用一种新的模型来进行电学测试和参数提取,可以获取SIMOX(离子束注入隔离氧化层)SOI圆片的上界面和下界面的界面态参数以及埋氧层的质量参数。传统的MOS电容结构测试电学特性应用到SOI圆片是有其局限性的,在本实验中直接利用SOI圆片的SIS(Silicon-Insulator-Silicon)结构,将SOI圆片的无损电学表征方法应用到实际的表征当中去。实验采用自行制备的低剂量超薄SIMOXSOI圆片,得到了比较可靠的实验结果。
By using a new model for electrical testing and parameter extraction, the interface state parameters of the upper and lower interfaces of SIMOX (Ion Beam Implanted Isolation Oxide) SOI wafers and the quality parameters of the buried oxide layer can be obtained. Traditional MOS capacitor structure test electrical characteristics applied to SOI wafers have their limitations. In this experiment, the SIS (Silicon-Insulator-Silicon) structure of SOI wafers was directly used to apply the non-destructive electrical characterization method of SOI wafers Go to the actual characterization. Experiments using self-prepared low-dose thin SIMOXSOI wafer, get more reliable experimental results.