The effect of Cd impurity on the electronic structure and magnetic properties of hydrogen-terminated A1 N nanoribbons with zigzag edges(ZAlNNRs) was investigate using the band structure results obtained through the full potential linearized augmented plane wave(FPLAPW) method within the density functional theory(DFT).The exchange correlation potential was treated by the generalized gradient approximation within the Perdew scheme.The calculated results show that the H-terminated zigzag A1 N nanoribbon is semiconducting and nonmagnetic material with a direct band gap of about 2.78 eV,while the Cd-doped H-terminated ZAINNR structures show complete(100%) spin polarization very close to the Fermi level,which will result in spin-anisotropic transport.The charge transport is totally dominated by Cd spin down electrons in the H-terminated ZAINNR.These results suggest potential applications for the development of using the A1 N nanoribbons in nanoelectronics and magnetoelectronic devices as a base. The effect of Cd impurity on the electronic structure and magnetic properties of hydrogen-terminated A1 N nanoribbons with zigzag edges (ZAlNNRs) was investigated using the band structure results obtained by the full potential linearized augmented plane wave (FPLAPW) method within the density functional theory (DFT). The exchange correlation potential was treated by the generalized gradient approximation within the Perdew scheme. The calculated results show that the H-terminated zigzag A1 N nanoribbon is semiconducting and nonmagnetic material with a direct band gap of about 2.78 eV, while the Cd-doped H-terminated ZAINNR structures show complete (100%) spin polarization very close to the Fermi level, which will result in spin-anisotropic transport. The charge transport is totally dominated by Cd spin down electrons in the H-terminated ZAINNR. These results suggest potential applications for the development of using the A1 N nanoribbons in nanoelectronics and magnetoelectronic devices as ab ase