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A lN是一种重要的半导体材料,由于具有宽带隙、高临界击穿电场、高热导率、高载流子饱和漂移速度等优越的特性,在微电子和光电子领域具有广泛的应用前景。本文综述了国际上A lN单晶生长的研究进展,对其结构特点、生长方法的选择、生长过程中的问题及存在的结构缺陷等方面进行了介绍。
A lN is an important semiconductor material. Due to its superior properties such as wide bandgap, high critical breakdown electric field, high thermal conductivity and high carrier saturation drift speed, A lN has broad application prospects in the field of microelectronics and optoelectronics. This review summarizes the research progress on the growth of A lN single crystal in the world, and introduces its structural features, the selection of growth methods, the problems in the growth process and the existing structural defects.