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以纯度为99.99%氧化锌铝(w(Zn O)=98.00wt%,w(Al_2O_3)=2.00wt%)陶瓷靶为原料,利用直流磁控溅射法在普通白玻璃衬底上制备铝掺杂氧化锌(AZO)薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)、四点探针测试仪和紫外可见光分光光度计等对薄膜的形貌、结构及光电性能进行分析。结果表明:薄膜具有c轴择优取向。随沉积温度升高,薄膜的结晶度先提高后下降,晶粒尺寸逐渐减小。当沉积温度为200℃时,可获得晶粒尺寸为18.30 nm、电阻率为4.1×10~(-3)Ω·cm、透过率为93.80%的AZO透明导电薄膜。
The aluminum target doped with aluminum oxide (w (Zn O) = 98.00wt%, w (Al_2O_3) = 2.00wt%) ceramic target was prepared by DC magnetron sputtering on a plain glass substrate with purity of 99.99% Zinc oxide (AZO) film. The morphology, structure and photoelectric properties of the films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), four-point probe tester and UV-visible spectrophotometer. The results show that the film has the preferred c-axis orientation. With the increase of deposition temperature, the crystallinity of the film first increases and then decreases, and the grain size decreases gradually. When the deposition temperature is 200 ℃, the AZO transparent conductive film with the grain size of 18.30 nm, the resistivity of 4.1 × 10 -3 Ω · cm and the transmittance of 93.80% can be obtained.