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本文介绍用1.3MeV电子束对p~+in~+二极管进行辐照,得出了少子寿命随辐照剂量增加而减少的结果。辐照造成的缺陷主要为双空位。辐照器件工作稳定可靠。
In this paper, the irradiation of p ~ + in ~ + diode with 1.3MeV electron beam is introduced. The result shows that the lifetime of minority carriers decreases with the increase of irradiation dose. The defects caused by irradiation are mainly double vacancies. Irradiation device work stable and reliable.