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国际整流器公司(简称IR)推出了Temp SENSEHEXFET型功率MOSFET,配备内置式温敏二极管,可发挥完善的温度感应功能,为汽车系统及各类高温系统提供妥善保护。全新的IRLBD59N04E是一种40V、20mΩ的N沟道MOSFET,内中有两个并联反接硅二极管,专门用来感应温度。当该器件的温度到达最高限值,每个二极管的正向电压降就会降至约0.4V,偏置电流则维持在250μA的水平。设计员只需把电路结构稍作改动,就可将这种逻辑器件与原有的微控制器配合使用。简单方便,
International Rectifier (IR) introduced the Temp SENSEHEXFET-type power MOSFETs with built-in temperature sensitive diodes to provide full temperature sensing capabilities for proper protection of automotive systems and high temperature systems. The new IRLBD59N04E is a 40V, 20mΩ N-channel MOSFET with two shunt-connected reverse-biased silicon diodes specifically designed to sense temperature. When the temperature of this device reaches the maximum value, the forward voltage drop of each diode will drop to about 0.4V, the bias current will be maintained at the level of 250μA. Designers simply change the circuit structure, this logic can be used in conjunction with the original microcontroller. easy and convenient,