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首次利用Sb2O3/Ag/Sb2O3(SAS)叠层透明导电薄膜作为透明电极,并采用衍射自组装沟道的方法研制了一种透明薄膜晶体管。通过一次掩模工艺,在电子束热蒸发过程中的SAS源漏电极之间制作沟道层。SAS透明导电薄膜具有优异的光电性能。研制的透明薄膜晶体管具有良好的器件性能,其迁移率高达11.36cm2/(V·s)。整个器件在可见光范围内的平均透过率为80%。结果表明,这种透明薄膜晶体管有希望应用于低成本透明光电子产品中。
For the first time, a transparent thin-film transistor was fabricated by using a transparent conductive film of Sb2O3 / Ag / Sb2O3 (SAS) as a transparent electrode and a diffraction self-assembled channel. Through a mask process, a channel layer is formed between the SAS source and drain electrodes during electron beam thermal evaporation. SAS transparent conductive film has excellent optical properties. The developed transparent thin film transistor has good device performance, the mobility of up to 11.36cm2 / (V · s). The average transmittance of the entire device in the visible range is 80%. The results show that the transparent thin film transistor is promising for use in low cost transparent optoelectronics.