论文部分内容阅读
采用直流磁控溅射并通过优化工艺参数,在(100)Si衬底上成功制备了高度(100)择优的MgO薄膜和MgO/TiN双层膜结构.对(100)MgO择优取向温度影响机理做了详细讨论,并利用XRD,AFM,FESEM等手段研究了在(100)Si和(100)TiN/Si两种衬底上,不同工艺条件下MgO薄膜的表面和断面微观结构,表征了MgO薄膜的柱状生长结构和与TiN薄膜的良好外延关系.在对薄膜光学特性的研究中,利用Sellmeier模型获得了Si上MgO薄膜在可见光波段的折射率参数(550 nm处折射率为1.692),利用非均匀模型获得了TiN/Si衬底上的MgO薄膜在可见光波段的折射率参数(靠近空气层的薄膜在550nm处折射率为1.716).
(100) MgO thin films and MgO / TiN bilayer films were successfully prepared on (100) Si substrate by DC magnetron sputtering and optimized process parameters.The effect of preferential orientation temperature on (100) MgO The surface and cross-section microstructures of MgO thin films on (100) Si and (100) TiN / Si substrates have been investigated by means of XRD, AFM and FESEM. In the study of the optical properties of films, the refractive index parameter (refractive index at 550 nm is 1.692) of MgO thin films on Si was obtained by Sellmeier model. In the non-uniform model, the refractive index of the MgO film on the TiN / Si substrate in the visible region was obtained. The refractive index of the film near the air layer at 550 nm was 1.716.