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针对0.13μm CMOS(Complementary Metal-Oxide-Semiconductor)体硅外延工艺下FPGA(Field Programmable Gate Arrays)配置片反熔丝PROM(Programmable-Read-Only-Memory)进行了单粒子效应(Single Event Effects SEEs)的加速器地面模拟试验研究。以PROM的存储容量、数据类型和工艺差异性为研究变量,考核与验证其在不同种类和能量粒子入射的系列性加速器地面SEEs模拟试验。研究结果表明,相对于8 Mbits PROM而言,空片16 Mbits PROM抗辐射性能最优,且从翻转饱和截面上说,16 Mbits的PROM具备更高的可靠性,优于国外同系列的芯片类型,试验用PROM芯片的单粒子锁定阈值99.0 Me V·cm2/mg。另一方面,研究0.13μm CMOS普通与深阱工艺技术下PROM芯片单粒子翻转效应异同性的实验数据表明,在高LET(Linear Energy Transfer)处的两者抗辐射性能并无明显变化,但是低LET处(LET翻转阈值)的加固效果较为明显,即抗辐射技术能力主要体现在LET翻转阈值的提升而非翻转截面的减小。
Aiming at the single event effects (SEEs) of FPGA (Field Programmable Gate Arrays) fabricated in 0.13μm CMOS (Complementary Metal-Oxide-Semiconductor) bulk silicon anti-fuse PROM Accelerator Ground Simulation Test and Research. Taking the storage capacity, data type and process variability of PROM as the research variables, the ground SEEs simulations of series accelerators with different types and energetic particles were tested and verified. The results show that, compared to the 8 Mbits PROM, the empty 16 Mbits PROM radiation performance is optimal, and from the flip saturation section, 16 Mbits PROM with higher reliability, better than the same type of chip , The single-particle locking threshold of the PROM chip for testing is 99.0 MeV · cm2 / mg. On the other hand, the experimental data on the single-element inversion effect of the PROM chip under 0.13μm CMOS common and deep-well process technology show that there is no obvious change in the anti-radiation performance between the two LETs (Linear Energy Transfer) LET Department (LET flip threshold) reinforcement effect is more obvious that the anti-radiation technical capabilities mainly reflected in the LET flip threshold to enhance rather than flip the reduction of cross-section.