参考国外电解化学腐蚀和化学择优腐蚀工艺,经两年来数十次试验证实,这两种工艺只适用外延硅材料。我们探索了一种既适用于外延硅材料又适用于高阻硅材料和包含有PN结样品的全耗尽探测器的制备工艺——光照观察化学腐蚀法。此工艺具有重复性好、成品率高、厚度均匀、有效面积大及探测器性能好等优点。 Reference to foreign electrolytic chemical corrosion and chemical preferential corrosion process, after dozens of tests over the past two years confirmed that these two processes only apply epitaxial silicon material. We explored a process for the preparation of a fully depleted detector that is suitable for both epitaxial silicon and high-resistivity silicon materials and contains PN junction samples - the Illumination Observation Chemical Etch method. This process has the advantages of good repeatability, high yield, uniform thickness, large effective area and good detector performance.