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采用复合靶共溅射技术制备纳米ＧａＡｓ晶粒镶嵌在ａ－ＳｉＯ２中的复合薄膜。通过控制淀积时基片的温度，调节靶面ＧａＡｓ的百分比，可制备出不同ＧａＡｓ晶粒尺度与体积百分比的薄膜。ＸＲＤ、ＴＥＭ和ＸＰＳ的分析结果表明薄膜是由ａ－ＳｉＯ２基体和均匀地弥散在ａ－ＳｉＯ２中的一定尺度的纳米ＧａＡｓ晶粒构成的。光吸收谱的研究显示，由于量子限域效应，ＧａＡｓ颗粒的能级分立，吸收边蓝移，蓝移量随粒径的减小而增大。
Composite target co-sputtering technique was used to fabricate nano-GaAs crystal grains in a-SiO2 composite films. By controlling the temperature of the substrate during deposition and adjusting the percentage of GaAs on the target surface, films with different GaAs grain sizes and volume percentages can be prepared. XRD, TEM and XPS analysis results show that the film is composed of a-SiO2 matrix and uniformly dispersed in a-SiO2 in a certain size of nano-GaAs crystal grains. The study of optical absorption spectra shows that due to the quantum confinement effect, the energy levels of GaAs particles separate, the absorption edge shifts blue and the amount of blue shift increases with decreasing particle size.