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美国动力系列公司已研制了一个超高速固态开关器件,相信它将对雷达、电子战和通讯技术的未来具有深远的意义。这种器件称为体效应雪崩半导体开关(BASS),由砷化镓(GaAs)半导体集成块组成,用低功率激光照射时,在数皮秒内便由绝缘体变为良导体。变化后的GaAs集成块可传输千兆瓦的能量。在传输线上使用这种新型开关时,通过单独合成每个脉冲,便能直接将直流电变为微波信号。而此高功率极短脉冲正是超宽带(UWB)雷达、高功率微波(HPM)电子战设备、秘密通讯系统和专用弹药引信所需要的。BASS可以使脉冲雷达和其它高级应用技术成为可能。
American Power Systems Inc. has developed a very fast solid-state switching device that is believed to have far-reaching implications for the future of radar, electronic warfare and communications technology. Called the body-effect avalanche semiconductor switch (BASS), this device consists of a gallium-arsenide (GaAs) semiconductor block that, when illuminated with a low-power laser, changes from an insulator to a good conductor in a matter of picoseconds. The changing GaAs manifold delivers gigawatts of energy. When this new type of switch is used on the transmission line, the direct current can be directly converted into a microwave signal by separately synthesizing each pulse. This high power very short pulse is exactly what is needed for UWB radar, HPM electronic warfare equipment, clandestine communications systems and specialized ammunition fuses. BASS makes pulsed radar and other advanced application technologies possible.