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针对光学石英玻璃在表面化学机械抛光(CMP)过程中易出现表面及亚表面损伤和蚀坑等缺陷问题,提出了采用低抛光压力和低磨料体积分数的CMP方法。机械作用是引起表面及亚表面损伤的关键因素,低抛光压力可以有效降低抛光过程中施于晶体表面的机械作用,抛光液中低磨料体积分数既可降低一定的机械作用又可降低由于高磨料体积分数引起的表面沾污。在降低机械作用的基础上,为获得较高的去除速率和较佳的表面质量,选用大分子胺碱作为pH调节剂,以增加质量传递作用。通过大量实验证实,粒径60 nm的硅溶胶磨料体积分数为8%、活性剂体积分数为5%、螯合剂体积分数为1%、pH值为9和抛光压力为1 psi(1 psi=6 895 Pa)的条件下,可获得较高的去除速率和较佳的表面质量,此时的去除速率为52.8 nm/min、表面粗糙度为0.126 nm。此结果可对业内此类材料的超精密加工提供一定的参考。
Aiming at the defect of surface and sub-surface damage and pits in the optical quartz glass during the surface chemical mechanical polishing (CMP) process, a CMP method with low polishing pressure and low abrasive volume fraction is proposed. The mechanical action is the key factor to cause surface and subsurface damage. Low polishing pressure can effectively reduce the mechanical effect applied to the crystal surface during polishing. The low abrasive volume fraction in the polishing liquid can not only reduce the mechanical effect but also reduce the wear resistance due to the high abrasive Surface contamination caused by volume fraction. In reducing the mechanical basis, in order to obtain a higher removal rate and better surface quality, the choice of macromolecular amine base as a pH regulator to increase the mass transfer. It has been confirmed by a large number of experiments that the volume fraction of silica sol with particle size of 60 nm is 8%, the volume fraction of active agent is 5%, the volume fraction of chelating agent is 1%, the pH is 9 and the polishing pressure is 1 psi 895 Pa), a higher removal rate and a better surface quality were obtained. The removal rate was 52.8 nm / min and the surface roughness was 0.126 nm. This result can provide a reference for the ultra-precision machining of such materials in the industry.