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采用反应磁控溅射法制备了一系列不同SiO2层厚度的AlN/SiO2纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能,研究了SiO2层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响.结果表明,由于受AlN六方晶体结构的模板作用,溅射条件下以非晶态存在的SiO2层在其厚度小于0.6nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长.由于不同模量的两调制层存在晶格错配度,多层膜中产生了拉、压交变的应力场,使得多层膜产生硬度升高的超硬效应.SiO2随层厚的进一步增加又转变为以非晶态生长,多层膜的外延生长结构受到破坏,其硬度也随之降低.
A series of AlN / SiO2 multilayered films with different SiO2 layer thickness were prepared by reactive magnetron sputtering. The microstructure and mechanical properties of multilayer films were characterized by X-ray diffraction, high-resolution transmission electron microscopy and micromechanical probe Performance of SiO2 layer in the multi-layer crystallization of the phenomenon and its multilayer multilayer film growth mode and mechanical properties.The results show that due to the template AlN hexagonal crystal structure, the sputtering conditions to amorphous The existing SiO2 layer is forcibly crystallized to the same hexagonal structure pseudo-crystal as AlN at a thickness of less than 0.6 nm and forms coextensive epitaxial growth with AlN. Due to lattice mismatch between the two modulation layers of different moduli, the multilayer In the film, the stress field of tension and pressure changes, which makes the multilayer film produce the superhard effect of increasing the hardness.With the further increase of layer thickness, SiO 2 transforms into amorphous growth, and the epitaxial growth structure of the multilayer film is affected Damage, its hardness also decreases.