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双极晶体管的辐照总剂量效应主要表现为电流增益下降和漏电流增加。工艺相同、发射结结深不同的LPNP双极晶体管的抗辐照敏感性不同,浅发射结LPNP的抗辐照性能更强。由于离子注入前氧化层的影响,厚氧化层形成的浅发射结LPNP具有更少的注入损伤,界面态较少,同时具有高的表面杂质浓度,从而减少了辐照后发射区上方的SRH复合以及过剩基极电流的增加,提高了LPNP双极晶体管的抗辐照性能。
The total dose effect of bipolar transistor irradiation is mainly manifested as a decrease of current gain and an increase of leakage current. LPNP bipolar transistors with different emitter-emitter junction depths have different anti-radiation sensitivities, and the LPNP with the light emitting junction has stronger anti-irradiation ability. Due to the influence of the oxide layer before ion implantation, the shallow-emitting junction formed by thick oxide LPNP has less implanted damage, less interfacial state and high surface impurity concentration, thus reducing the SRH recombination above the irradiated area As well as the increase of excess base current, improves the anti-radiation performance of the LPNP bipolar transistor.