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研究了普通直拉(CZ)硅单晶和掺氮直拉(NCZ)硅单晶在氩气氛下进行1250℃/50s的快速热处理(RTP)后,再经600～1000℃的不同温区内的缓慢升温处理和1000℃保温处理后的氧沉淀行为.研究表明,由RTP引入的空位在700～800℃间缓慢升温退火时对CZ硅中氧沉淀形核的促进作用最显著,而在800～900℃间缓慢升温退火时对NCZ硅中氧沉淀形核的促进作用最显著;在800℃以上,氮促进氧沉淀形核的作用比空位更强.此外,提出了适用于CZ和NCZ硅片的基于高温RTP和低温缓慢升温热处理的内吸杂工艺.
In this paper, we studied the rapid thermal annealing (RTP) of ordinary Czochralski (CZ) silicon and nitrogen-doped Czochralski (NCZ) silicon single crystals at 1250 ° C / 50s in an argon atmosphere, And the oxygen precipitation behavior after 1000 ℃ heat preservation.The results show that the promotion effect of vacancies introduced by RTP on oxygen precipitation nucleation in CZ silicon is the most significant when annealed slowly between 700 and 800 ℃, The effect of slow temperature rising annealing at ~ 900 ℃ on the nucleation of oxygen precipitates in NCZ silicon is the most obvious. Above 800 ℃, the effect of oxygen on oxygen nucleation is stronger than that of vacancies.In addition, Based on the high-temperature RTP and low temperature slow heat treatment within the gettering process.