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为了进行有效的集成电路（ＩＣ）成品率预报及故障分析，与光刻有关的硅片表面缺陷通常被假定为圆形的或方形的．然而，真实的缺陷的形貌是多种多样的．本文讨论了缺陷轮廓所具有的分形特征．该结果为硅片表面缺陷的精细表征及其计算机模拟作了有益的探索
For efficient integrated circuit (IC) yield forecasting and failure analysis, photolithography-related wafer surface defects are generally assumed to be circular or square. However, the real flaws are many and varied. This article discusses the fractal features of defect profiles. This result provides a useful exploration for the fine characterization of silicon surface defects and its computer simulation