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本文报道掺磷浓度为10~(13)cm~(-3)的N型Si中磷杂质基态分裂的PTIS光谱实验结果,精确测定了P的基态分裂值为6△_c=12.95meV;通过计算P的基态布居数随温度的变化,得到了不同基态跃迁谱线相对强度与温度的关系,结果与实验吻合.
In this paper, PTIS spectra of ground state phosphorus impurities in N-type Si doped with phosphorus at a concentration of 10 ~ (13) cm ~ (-3) were reported. The ground state splitting value of P was accurately determined as 6 △ _c = 12.95meV. The relationship between the relative intensity of the ground state transition spectra and the temperature of the ground state is obtained with the change of the population of the ground state of P, and the result is in good agreement with the experiment.