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第三代宽带隙材料对光电子学的影响最大。其中某些技术有力地推动了大功率芯片—硅双极,硅ＭＯＳＦＥＴ以及宽带隙器件(兰光ＬＥＤ)和ＧａＮ激光器。由于曾经寄予希望的硒化锌状况令人失望,ＧａＮ就成了唯一的选择,ＧａＮ的短波长(410ｎｍ)使其数据存储容量4倍于ＧａＮｓ器件。
The third generation of broadband bandgap material has the greatest impact on optoelectronics. Some of these technologies are powerful contributors to high-power chips - silicon bipolar, silicon MOSFETs and wide bandgap devices (blue LEDs) and GaN lasers. GaN was the only option due to the disappointing state of the zinc selenide that had been hoped for. The short wavelength of GaN (410nm) made it possible to quadruple the data storage capacity of GaN devices.