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在上届电子管技术会议上,Norris博士提出了一种称之为EBIRD的电子注电离半导体器件的工作原理。根据这种理论,Norris预见了这种复合管的增益、响应和输出能力的奇异的结合。利用台面式半导体二极管的实验指出:这种结构不能与氧化物阴极配合使用,以及为使EBIRD的能力完善必须研制一种平面二极管,这种平面二极管有一个浅的结,很薄的耗尽区和一个钝态结。然而利用非调谐的宽带输出电路,边缘台面二极管已达到高的高频增益(>20db)。这些器件的高频工作特性,在本文中将详细讨论。文中也给出二极管的偏压对电流增益的影响的数据,还讨论了影响增益饱和的因素。
At the last tube technology conference, Dr. Norris proposed an operating principle called an EBIRD electron-injection ionization semiconductor device. According to this theory, Norris foresees a singular combination of gain, response and output capability of such a composite pipe. Experiments using mesa semiconductor diodes indicate that this structure can not be used in conjunction with oxide cathodes and that for planarization of EBIRD capability a planar diode has to be developed which has a shallow junction and a thin depletion region And a blunt knot. However, with non-tuned broadband output circuits, the edge mesa diodes have achieved high high frequency gain (> 20db). The high frequency operating characteristics of these devices are discussed in detail in this article. The paper also gives data on the effect of diode bias on the current gain, as well as the factors that affect the gain saturation.