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针对微通道热沉封装的大功率无铝量子阱半导体激光阵列(LDA)建立三维有限元模型,模拟分析了热沉温度、工作电流以及占空比等工作条件对有源区温度的影响,并通过实验手段研究了不同工作条件下,大功率半导体激光阵列的输出特性的变化情况。结果表明,热沉温度越高、占空比越大时,器件达到稳态所需时间越长,有源区温度越高,中心波长红移越大;阈值电流越大,转换效率、斜率效率越低,输出功率越小。外推了半导体激光阵列在20℃热沉温度,20%高占空比,300 A高注入电流条件下工作的输出特性,得到输出功率超过300 W,转换效率达45%,且没有出现热饱和现象。
A three-dimensional finite element model of a high power aluminum-free quantum well semiconductor laser array (LDA) with microchannel heatsink encapsulation was established. The effects of operating conditions such as heatsink temperature, operating current and duty cycle on the temperature of the active region were simulated. The output characteristics of high power semiconductor laser arrays under different working conditions were studied experimentally. The results show that the higher the heat sink temperature is, the longer the duty cycle is. The longer the active region is, the higher the temperature of the active region is, the larger the red shift of the center wavelength is. The larger the threshold current is, the higher the threshold current is, The lower the output power, the smaller. Extrapolating the output characteristics of a semiconductor laser array operating at 20 ° C heat sink temperature, 20% duty cycle, and 300 A high injection current results in an output power of over 300 W, a conversion efficiency of 45%, and no thermal saturation phenomenon.