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In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 °C, respectively.
In this paper, we report a novel 1.3-μm uncooled AlGaInAs / InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of the reversed-mesa ridge waveguide (RM- RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb / s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW / mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 ° C, respectively.