A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper.The device features an integrated Schottky barrier diode and an L-shaped P+ shielding region beneath the gate trench and aside one wall of the gate trench (S-TMOS).The integrated Schottky barrier diode works as a free-wheeling diode in reverse recovery and reverse conduction,which significantly reduces reverse recovery charge (Qrr) and reverse turn-on voltage (VF).The L-shaped P+ region effectively shields the coupling of gate and drain,resulting in a lower gate-drain capacitance (Cgd) and date-drain charge (Qgd).Compared with that of conventional SiC trench MOSFET (C-TMOS),the VF and Q2rr of S-TMOS has reduced by 44％ and 75％,respectively,with almost the same forward output current and reverse breakdown voltage.Moreover,the S-TMOS reduces Qgd and Cgd by 32％ and 22％,respectively,in comparison with C-TMOS.