The surface oxidation of silicon (Si) wafers by atomic oxygen radical anions (O- anions) and the preparation of metal-oxide-semiconductor (MOS) capacitors on the O--oxidized Si substrates have been examined for the first time. The O- anions are generated from a recently developed O- storage-emission material of [Ca24Al28O64]4+.4O- (C12A7-O- for short). After it has been irradiated by an O- anion beam (0.5 μA/cm2) at 300℃ for 1-10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32 nm. X-ray photoelectron spectroscopy (XPS) results reveal that the oxide layer is of a mixture of SiO2, Si2O3, and Si2O distributed in different oxidation depths. The features of the MOS capacitor of are investigated by measuring capacitance-voltage (C - V) and current-voltage (Ⅰ - Ⅴ) curves. The oxide charge density is about 6.0×1011 cm-2 derived from the C - V curves. The leakage current density is in the order of 10-6 A/cm2 below 4 MV/cm, obtained from the Ⅰ - Ⅴ curves. The Oanions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.