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根据红外测温原理、薄膜等厚干涉模型及相关光学参数,在Al2O3、SiC、Si三种衬底上用金属有机物化学气相沉积(MOCVD)技术制备10μm GaN外延层的过程中,对940nm单色测温、1550nm单色测温、940nm/1550nm比色测温的发射率引起表观温度误差、真实温度与表观温度偏差进行理论比较。利用Si(111)衬底上制备InGaN/GaN多量子阱(MQW)蓝光发光二极管(LED)外延片过程的940nm单色测温及940nm/1550nm比色测温结果,验证该建模及计算的正确性。研究结果表明:在500~1300℃,相同测温法在不同衬底间表观温度误差系数区别不大。相同衬底下,误差系数由小到大依次为:比色测温、940nm单色测温、1550nm单色测温。相同测温法在不同衬底间真实温度与表观温度偏差较大。相同衬底下,偏差结果由小到大依次为:比色测温、1550nm单色测温、940nm单色测温。该计算方法与结论可为红外测温设备的研发、不同衬底GaN基外延测温方法的选择提供借鉴与参考。
In the process of preparing a 10μm GaN epitaxial layer by metal organic chemical vapor deposition (MOCVD) on Al2O3, SiC, Si substrates according to the principle of infrared temperature measurement, the isometric interference model of thin film and the related optical parameters, Temperature measurement, 1550nm monochromatic temperature measurement, 940nm / 1550nm colorimetric temperature emissivity caused by the apparent temperature error, the true temperature and apparent temperature deviation theoretical comparison. Using the 940nm monochromatic temperature measurement and the 940nm / 1550nm colorimetric temperature measurement of the InGaN / GaN MQW (blue light-emitting diode) epitaxial wafer on Si (111) substrate, the model and the calculated Correctness The results show that there is no significant difference in apparent temperature error coefficients between different substrates at the temperature of 500 ~ 1300 ℃. The same under the substrate, the error coefficient from small to large order: colorimetric temperature, 940nm monochromatic temperature, 1550nm monochromatic temperature. The same temperature measurement in different substrates between the real temperature and apparent temperature deviation. Under the same substrate, the deviation results from small to large are as follows: colorimetric temperature measurement, 1550nm monochromatic temperature measurement, 940nm monochromatic temperature measurement. The calculation method and conclusion may provide reference for the development of infrared temperature measurement equipment and the selection of GaN substrate epitaxial temperature measurement methods.