据报道日本冲电气在 Si 衬底上直接形成可制作器件的 GaAs,继而完成 GaAs 三维电路元件。Si 衬底上的 GaAs 晶体由 MOCVD 法生成,用直接离子注入法,最终制成17级 E/D 结构的环形振荡器。栅长1μm,栅宽10μm 的典型器件的跨导为240mS/mm,环形振荡器的 t_(pd)是51ps/门,t_(ps)·p 是10.4,fJ/门(t_(pd)为63ps/门),这些数值几乎与平常的 GaAs 器件一样。 It is reported that OKI Japan directly formed on the Si substrate can be fabricated GaAs devices, and then complete GaAs three-dimensional circuit components. GaAs crystals on the Si substrate are formed by the MOCVD method, and finally a 17-stage E / D ring oscillator is fabricated by direct ion implantation. A typical device with a gate length of 1 μm and a gate width of 10 μm had a transconductance of 240 mS / mm, a t_ (pd) of a ring oscillator of 51 ps / gate, a t_ (ps) · p of 10.4 and a fJ / gate of 63 ps / Gate), these values ​​are almost the same as normal GaAs devices.