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采用反应磁控溅射在硅衬底上制备了TaN薄膜,研究了氮分压、溅射功率及衬底温度对薄膜晶体结构、表面形貌和电学性能的影响。结果表明,晶体结构随工艺参数的改变发生变化,GIXRD图谱衍射峰强度随溅射功率和衬底温度的增加而增强,氮气分压的增加使择优取向向(111)晶面偏移;TaN薄膜的表面形貌与溅射功率和氮气分压密切相关,与衬底温度的关系不大,其粗糙度随溅射功率的增加而增大,随氮气分压的增加而减小;TaN薄膜的方块电阻随溅射功率的增加逐渐减小,随氮气分压的增加逐渐增大,温度对方块电阻的影响不大;对Cu/TaN/Si互联体系热处理后发现TaN薄膜具有优异的阻挡性能,在600℃时依然可有效阻止Cu向Si的扩散。
TaN films were prepared on silicon substrate by reactive magnetron sputtering. The effects of nitrogen partial pressure, sputtering power and substrate temperature on the crystal structure, surface morphology and electrical properties of the films were investigated. The results show that the crystal structure changes with the change of the process parameters. The diffraction peak intensities of GIXRD spectra increase with the increase of sputtering power and substrate temperature. The increase of nitrogen partial pressure shifts the orientation of the preferred orientation to the (111) crystal plane. Is closely related to the sputtering power and the partial pressure of nitrogen, and has little to do with the substrate temperature. The roughness increases with the increase of sputtering power and decreases with the increase of nitrogen partial pressure. The surface morphology of TaN thin film The square resistance decreases with the increase of sputtering power and increases with the increase of partial pressure of nitrogen, and the temperature has little effect on the square resistance. The TaN thin film has excellent barrier properties after Cu / TaN / At 600 ℃ can still effectively prevent the diffusion of Cu to Si.