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场引晶体管本质双极,包括电子和空穴表面和体积沟道和电流,一或多个外加横向控制电场.自1952年Shockley发明,55年来它被认为单极场引晶体管,因电子电流理论用多余内部和边界条件,不可避免忽略空穴电流.多余条件,诸如电中性和常空穴电化电势,导致仅用电子电流算内部和终端电学特性的错误解.当忽略的空穴电流与电子电流可比,可在亚阈值区和强反型区,错误解有巨大误差.本文描述普适理论,含有电子和空穴沟道和电流.用z轴宽度方向均匀的直角平行六面体(x,y,z)晶体管,薄或厚、纯或杂基体,一或二块MOS栅极,描述两维效应及电势、电子空穴电化电势的正确内部和边界条件.没用多余条件,导出四种常用MOS晶体管,直流电流电压特性完备解析方程:半无限厚不纯基上一块栅极(传统的Bulk MOSFET),与体硅以氧化物绝缘的不纯硅薄层上一块栅极(SOI),在沉积到绝缘玻璃的不纯硅薄层上一块栅极(SOITFT),和薄纯基上两块栅极(FinFETs).
Field-induced transistors are bipolar in nature, including electron and hole surfaces and bulk channels and currents, and one or more extra-lateral control electric fields. Shockley invented it in 1952 and for 55 years it was considered a monopolar field-induced transistor because of electron current theory With extra internal and boundary conditions, hole currents are unavoidably ignored. Excess conditions, such as electroneutral and cavitation electrochemical potentials, result in erroneous solutions of the internal and the terminal electrical characteristics using only the electron current.When neglected hole currents and The electronic current is comparable and can be in the subthreshold region and the strong inversion region, and there is a huge error in the misunderstanding.In this paper, the universal theory is described, which contains the electron and hole channels and the current.According to the rectangular parallelepiped (x, y, z) Transistors, thin or thick, pure or heterodyne, one or two MOS gates describing the correct internal and boundary conditions for two-dimensional effects and potentials, electron-hole electrochemical potentials. Without extra conditions, four Commonly used MOS transistor, DC current and voltage characteristics of a complete analytical equation: a semi-infinite thick impure base of a gate (traditional Bulk MOSFET), and bulk silicon oxide-insulated impure silicon a gate (SOI) In the deposition of insulating glass A gate of impure silicon (SOITFT), and two thin gate FinFETs.