使用 2 6 6nmNd YAG激光 (脉宽为 4ns ,能量密度 2J/cm2 ) ,以钛合金作衬底 ,在温度为4 0 0～ 4 50℃条件下 ,分别选择真空、Ar、O2 、H2 O气为沉积环境进行HAP薄膜的制备 ,并通过红外光谱、Raman光谱、原子力显微镜对所获得的HAP薄膜进行表征。测量分析表明 :在该温度下 ,我们用脉冲激光法沉积出的HAP薄膜均匀性良好 ,表面无剥蚀和层断 ,薄膜呈非晶态和结晶态的混合物 ;水蒸汽的存在对HAP薄膜结晶程度有重要影响。 Using a 2 6 6 nm Nd: YAG laser with a pulse width of 4 ns and an energy density of 2 J / cm 2, a titanium alloy was used as a substrate. Vacuum, Ar, O 2 and H 2 O gases were respectively selected at a temperature of 400 to 450 ° C. HAP films were prepared for the depositional environment, and the obtained HAP films were characterized by infrared spectroscopy, Raman spectroscopy and atomic force microscopy. The measurement results show that at this temperature, the HAP film deposited by pulsed laser method has good uniformity, no erosion and delamination on the surface, and the film has a mixture of amorphous state and crystalline state. The existence of water vapor affects the degree of crystallization of the HAP film Have a significant impact.