论文部分内容阅读
采用溶胶-凝胶旋涂法在玻璃衬底上制备了不同Cu掺杂量的ZnO薄膜。用显微镜和X射线衍射(XRD)研究了Cu掺杂对ZnO薄膜形貌和微结构的影响。结果表明,制备得到的ZnO薄膜具有应变小和c轴择优取向。室温下测量了样品Zn1-xCuxO的光致发光(PL)谱,发现所有样品的PL谱中均观察到435nm左右的蓝光发光带,发光带强度与Cu的掺杂量有关;当x=0.06时,Zn1-xCuxO薄膜的PL谱中出现了较强的蓝光发射。分析了掺杂量对发光性能的影响,并对样品的发光机制进行了探讨,推断出蓝光峰来源于电子由导带底到锌空位(VZn)能级的跃迁及锌填隙(Zni)能级到价带顶的跃迁,它们可通过改变Cu的掺杂量予以控制。
ZnO films with different Cu doping amount were prepared on glass substrates by sol-gel spin coating. The effects of Cu doping on the morphology and microstructure of ZnO thin films were investigated by means of a microscope and X-ray diffraction (XRD). The results show that the prepared ZnO thin film has a small strain and a preferred c-axis orientation. The photoluminescence (PL) spectra of Zn1-xCuxO samples were measured at room temperature. The PL spectra of all the samples were observed around 435nm blue luminescence bands, the emission band intensity and Cu doping amount; when x = 0.06 , Strong blue emission appeared in the PL spectrum of Zn1-xCuxO thin films. The effect of doping amount on the luminescence properties was analyzed. The luminescence mechanism of the samples was also discussed. The blue light peak was deduced from the transition of electrons from the bottom of conduction band to the vacancy of zinc (VZn) Level to valence band top transitions that can be controlled by varying the amount of Cu doping.