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将 Si、Ge和 Ar三种离子注入到磁控溅射制备的富硅二氧化硅和热生长的二氧化硅中 ,在 N2 气氛中 ,作 550、 650、 750、 850、 950和 1 0 50℃退火后 ,进行电致发光研究 .对比样品为退火条件相同的未经注入的上述两种二氧化硅 .对于离子注入情况 ,只观察到 Au/ 1 0 50℃退火的离子注入的富硅二氧化硅 / p- Si的电致发光 .低于 1 0 50℃退火的离子注入富硅二氧化硅和上述各种温度下退火的热生长二氧化硅 ,无论离子注入与否 ,都未观察到电致发光 .Au/未注入富硅二氧化硅 / p- Si的电致发光光谱在 1 .8e V处出现主峰 ,在 2 .4e V处还有一肩峰 .在 Au/ Si注入富硅二氧化硅 / p- Si的电致发光谱中 ,上述两峰的强度分别增加了 2倍和 8倍 ;在 Au/ Ge注入富硅二氧化硅 / p- Si和 Au/ Ar注入富硅二氧化硅 / p- Si的电致发光谱中 ,上述两峰的强度变化不大 ,但都观测到峰位位于 2 .2 e V的新发光峰 .采用隧穿 -量子限制 -发光中心模型对实验结果进行了分析和解释
Three kinds of ions of Si, Ge and Ar were implanted into the silicon-rich silica and the thermally grown silica prepared by magnetron sputtering, and 550, 650, 750, 850, 950 and 1050 Electroluminescence studies were performed after annealing at C. The comparative samples were the same uninjected silica with the same annealing conditions.For ion implantation only Au / Electroluminescence of silicon oxide / p-Si Ion-implanted silicon-rich silica below the annealing temperature of 1050C and thermally grown silicones annealed at various temperatures described above were observed irrespective of ion implantation or not Electroluminescence. The electroluminescence spectrum of Au / unpfused silica / p-Si exhibits a main peak at 1.8eV and a shoulder at 2.4e V. In Au / Si-rich Si02 In the electroluminescence spectra of silicon oxide / p-Si, the intensities of the above two peaks increased by 2 and 8 times, respectively; in the case of Au / Ge implanted silicon rich silicon dioxide / p-Si and Au / Ar silicon rich silicon dioxide In the electroluminescence spectra of silicon / p-Si, the intensity of the above two peaks did not change much, but new luminescence with the peak at 2.2 eV was observed . Using tunneling - quantum confinement - a luminescence center model experimental results are analyzed and explained