一、引言 小角度晶界是半导体单晶中一种有严重危害的缺陷。在锗单晶生产中,它迄今仍是影响成品合格率的重要因素之一。(如安阳半导体材料厂1976年前三个月统计,不合格单晶中因小角晶界报废的约占70％)。所以研究单晶中小角晶界的形成原因及其消除途径具有一定的意义。 五十年代的研究对晶体中的小角晶界已 I. Introduction Small-angle grain boundaries are a serious hazard in semiconductor single crystals. In the production of germanium single crystals, it is still one of the important factors affecting the yield of finished products. (Such as Anyang semiconductor material factory in the first three months of 1976 statistics, unqualified single crystal due to small angle grain boundary scrap about 70%). Therefore, it is of great significance to study the formation of small-angle grain boundaries in single crystals and the way to eliminate them. The fifties research has been on the small-angle grain boundaries in the crystal