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介绍了用溶胶 凝胶方法制备Pb(Zr0 .53Ti0 .4 7)O3(PZT)铁电薄膜的工艺流程。以硝酸锆、醋酸铅和钛酸四丁酯为原料 ,在 90 0℃ ,30min退火条件下制备了硅基PZT铁电薄膜。实验分析结果显示 ,PZT铁电薄膜的晶化很完善。研究了PZT铁电薄膜与硅之间的界面及其对铁电薄膜品质的影响。并在此基础上实现了制备PZT铁电薄膜的低温改进工艺。
The process of preparing Pb (Zr0.53Ti0.47) O3 (PZT) ferroelectric thin films by sol-gel method is introduced. Silicon-based PZT ferroelectric thin films were prepared by using zirconium nitrate, lead acetate and tetrabutyl titanate as raw materials at 90 0 ℃ for 30min. Experimental results show that PZT ferroelectric thin film crystallization is perfect. The interface between PZT ferroelectric thin film and silicon and its effect on the quality of ferroelectric thin films were studied. On the basis of this, the low temperature improvement process of preparing PZT ferroelectric thin films was realized.