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完美晶体器件技术(PCT)指的是使硅晶体保持在完美状态的半导体器件制造技术。若想控制集成电路、晶体管等半导体器件的基本特性,就要设法使 PN 结和结面保持完美状态。以位错、不同杂质析出等为代表的结构缺陷等晶体内部的问题对 PN 结特性有强烈的影响。它不仅引起反向电压电流特性交软(漏电流变大),而且反向耐压要比正常的击穿电
Perfect Crystal Device Technology (PCT) refers to semiconductor device fabrication technology that keeps silicon crystals in perfect condition. If you want to control the basic characteristics of semiconductor devices such as integrated circuits, transistors, and so on, we must try to PN junction and the junction to maintain a perfect state. Structural defects such as dislocation, precipitation of different impurities, and the like have a strong influence on the PN junction characteristics. It not only causes the reverse voltage and current characteristics to pay soft (leakage current larger), and the reverse breakdown voltage than the normal breakdown of electricity