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砷化镓肖特基势垒场效应晶体管的噪声性能已在理论和实验上作了研究。已经发现,当偏置加于夹断区时,砷化镓场效应晶体管还有另外一种噪声源——谷间散射噪声。研究了这种噪声源并提出了一种新的晶体管噪声模型。在2～10千兆赫频率范围内,测量和计算的噪声系数很好地一致。可以看出,减薄沟道厚度可减小谷间散射噪声的影响。该器件在 X 波段下具有极好的增益和噪声特性。
The noise performance of gallium arsenide Schottky barrier field effect transistor has been studied both theoretically and experimentally. It has been found that gallium arsenide field-effect transistors have another type of noise source, the intergranular scattering noise, applied to the pinch-off region. This noise source is studied and a new transistor noise model is proposed. The noise figure measured and calculated is well consistent over the 2 to 10 GHz frequency range. It can be seen that reducing the channel thickness can reduce the influence of the inter-valley scattering noise. The device has excellent gain and noise characteristics in the X-band.