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为了控制碳纳米管阴极发射电子束的形状,设计了4种电子通道来控制电子束轨迹.在设计结构中,其基本结构是一倒置的内壁涂有绝缘材料的漏斗状通道.当初始电子碰撞绝缘壁时,会产生二次电子,而二次电子能改善电子在通道出口处的电子能量分布的均匀性.通过分析和比较电子在通道出口处的状态,得到了一种理想的通道结构.在该结构中,电子在通道出口处的分布更加均匀,电子束的束径较小.而且通过在慢波线外部加磁场的方法来控制电子束在慢波线中的扩散,所加的磁场越大,电子在慢波线中的通过率则越大.通过分析4种不同的结构,在所得到的一种理想的通道结构中,需要较小的磁场就能使得电子在慢波线中的通过率较高.
In order to control the shape of the electron beam emitted by the carbon nanotubes, four kinds of electron channels are designed to control the trajectory of the electron beam. In the design structure, the basic structure is an inverted inner wall coated with an insulating funnel-shaped channel. When the initial electron collision When the insulation wall is formed, the secondary electrons are generated, and the secondary electrons can improve the uniformity of the electron energy distribution at the exit of the channel. By analyzing and comparing the states of the electrons at the exit of the channel, an ideal channel structure is obtained. In this structure, the distribution of electrons at the exit of the channel is more uniform and the beam diameter of the electron beam is smaller, and by controlling the diffusion of the electron beam in the slow wave line by applying a magnetic field outside the slow wave line, the applied magnetic field The larger the electron passing rate in the slow-wave line, the greater the analysis of four different structures in the resulting ideal channel structure, the need for a smaller magnetic field can make electrons in the slow-wave line The higher pass rate.