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用离子注入技术实现了Al表面C元素的掺杂,并利用XPS,XRD,TEM和SEM研究了C掺杂对Al中离子注入He行为的影响.结果表明,掺杂的C在Al表面形成了Al_4C_3,随着C掺杂量的增加,Al表面组织的择优取向和晶胞体积发生改变,从而影响了Al中的He离子注入行为.预先掺杂的C对He离子注入Al表面的鼓泡行为有重要影响,其影响程度与掺杂剂量有关.小剂量C掺杂后,能有效抑制鼓泡的长大,并使Al表面鼓泡均匀分布;更高剂量C掺杂后,C对表面鼓泡的抑制作用减弱,甚至加剧He离子的辐照损伤,Al表面出现孔洞和剥落现象.掺杂的C对Al基体的微观结构也有很大影响.
The effect of C doping on the He ion implantation behavior in Al was investigated by XPS, XRD, TEM and SEM. The results show that the doped C forms on the Al surface Al_4C_3, with the increase of C doping, the preferential orientation of Al surface structure and the unit cell volume changed, which affected the He ion implantation behavior in Al.The pre-doping C had a significant effect on the bubbling behavior of He ion on Al surface Has an important influence on the degree of doping dose.A small dose of C doped, can effectively inhibit the growth of bubbling, and the Al surface bubbling uniform distribution; higher dose of C-doped, C on the surface of the drum The inhibitory effect of the foam is weakened, and even the irradiation damage of He ions is aggravated, and the holes and spalling appear on the Al surface. The doping C also has a great influence on the microstructure of the Al matrix.