Ⅲ～Ⅴ族半导体材料,经过阳极氧化以后,可以生成一层电阻率很高的绝缘层。这种工艺可用来制备MOS器件;或使半导体器件表面纯化,防止工艺中的再沾污,降低表面的漏电流,以达到提高半导体器件的电学性质的目的。有关这方面的研究工作,国外已有大量的报导。本文是对InSb(111)晶片,选用了几种不同类型的电解液,以恒流法进行了阳极氧化实验。对所生成的阳极氧化膜,用光学显微镜观察表面形态;离子探针法分析杂质沾污; Ⅲ ~ Ⅴ semiconductor materials, after anodizing, you can generate a layer of high resistivity insulating layer. This process can be used to prepare MOS devices; or to purify the surface of the semiconductor device to prevent re-contamination in the process and to reduce the surface leakage current for the purpose of improving the electrical properties of the semiconductor device. There are a lot of reports abroad about the research work in this field. This article is for the InSb (111) wafer, selected several different types of electrolyte, anodic oxidation experiments were carried out by constant current method. The surface of the formed anodic oxide film was observed with an optical microscope, and the impurity probe was analyzed by the ion probe method.