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用Q开关Nd:YAG脉冲激光辐照淀积在Si上的稀土元素Yb,当输出能量密度≥6.0J/cm~2时,成功地把Yb引入Si中.用二次离子质谱(SIMS)分析指出进入Si中Yb的表面浓度为3 ×10~(11)/cm~3,在离表面 0.75μm处,浓度仍有 7 ×10~(19)/cm~3.
The rare earth element Yb deposited on Si was irradiated with a Q-switched Nd: YAG pulsed laser beam and Yb was successfully introduced into Si when the output energy density was ≥ 6.0 J / cm ~ 2. Analysis by secondary ion mass spectrometry (SIMS) It is pointed out that the surface concentration of Yb entering Si is 3 × 10-11 / cm ~ 3, and the concentration of Yb is still 7 × 10 ~ (19) / cm ~ 3 at 0.75μm away from the surface.