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最近对HgCdTe外延生长技术和器件表面钝化的研究,使光伏型红外探测器主要性能得以改进。以CdTe为衬底,用液相外延法,能生长具有任何组分的薄层HgCdTe,用这种材料制作探测器,其峰值响应能在1至14μm波长内进行调整。本文介绍了形成结的两种方式,即注入同质结和双层异质结。还报导了探测度受背景辐射限制(BLIP)的情况。为了设计1-3、3-5和8-14μm波段的二极管,从理论上预测了R_0A~((*))、频率和结偏压与暗噪声电流的关系,并以5×10~(-15)A/Hz~(1(?)2)来表征。这表明可以根据产生-复合(G-R)电流和少数载流子扩散电流的机理,在所关心的波长和温度下,讨论器件的性能。
Recent research into the HgCdTe epitaxial growth technology and device surface passivation has led to improvements in the main performance of PV-based infrared detectors. Using CdTe as a substrate, a thin layer of HgCdTe with any composition can be grown by liquid-phase epitaxy. The detector is fabricated from this material and its peak response can be adjusted within a wavelength of 1 to 14 μm. This article describes two ways to form junctions, namely implanting homojunction and two-level heterojunction. The detection of extent of background radiation limitation (BLIP) was also reported. In order to design diodes of 1-3, 3-5 and 8-14μm wavelength, the relationship between R_0A ~ (*), frequency and junction bias voltage and dark noise current is theoretically predicted, and with 5 × 10 ~ (- 15) A / Hz ~ (1 (?) 2). This shows that the device performance can be discussed at the wavelengths and temperatures of interest based on the mechanism of generation-recombination (G-R) current and minority carrier diffusion current.