论文部分内容阅读
利用r.f.辉光放电方法,在单室生长系统内,由周期性地改变SiH_4和NH_3反应气氛成功地获得了Ls由10A到200A的a-Si:H/a-SiN_x:H超晶格结构.由TEM和XPS实验结果证明超晶格结构具有平滑陡峭的界面.通过分析(Si-H)键拉伸振动模在波数2400cm~(-1)-1800cm~(-1)范围内的精细结构,揭示了a-Si:H/a-SiN_x:H界面中(Si-H)N振动模的形式.并证实有过量的H键合于界面层中.由紫外-可见吸收光谱的研究,证明当 L_s<60A,光学能隙E_R~(opt)的位移是超晶格结构中量子势阱限制效应的影响.其实验值和理论计算值符合得较好.
Using rf glow discharge, a-Si: H / a-SiN_x: H superlattice structure with Ls ranging from 10 A to 200 A was successfully obtained by periodically changing SiH 4 and NH 3 reaction atmospheres in a single chamber growth system. The results of TEM and XPS show that the superlattice structure has a smooth and steep interface.By analyzing the fine structure of Si-H stretching vibration mode in the range of 2400 cm -1 to 1800 cm -1, Revealed the form of (Si-H) N vibrational modes in the a-Si: H / a-SiN_x: H interface and confirmed that an excessive amount of H was bonded to the interface layer.Under UV-Vis absorption spectra, L_s <60A, the displacement of the optical energy gap E_R ~ (opt) is the influence of the quantum well confinement effect in the superlattice structure, and its experimental value is in good agreement with the theoretical calculation.