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通过 SiH_4和微波激活(2.45千兆赫)而产生活化氮的反应淀积了氮化硅膜。根据 Arrhenius 图,对于350℃～150℃激活能是0.6千卡/克分子,而对于150℃～50℃是2.3千卡/克分子。当淀积温度低于150℃时,其膜是一种松散的结构,这就引起一个快的腐蚀速率。对于每个 R_P,由不同浓度 SiH_4生成的膜,其折射率有一个最大值,并且低于2。根据 I-R 测量,证明了用目前的方法生成的膜是氮化硅膜。在特殊的条件下,得到了氮化硅的准确的化学配比。萤光光谱分析指出,在淀积的时候,SiH_4在活化氮出现时容易分解为 Si 原子,而且 Si 原子和 N 原子以一种气体状态存在。
A silicon nitride film was deposited by the reaction of SiH4 with microwave activation (2.45 GHz) to produce activated nitrogen. According to the Arrhenius plot, the activation energy is 0.6 kcal / mol for 350 ° C to 150 ° C and 2.3 kcal / mol for 150 ° C to 50 ° C. When the deposition temperature is below 150 ° C, the film is a loose structure, which results in a fast corrosion rate. For each R_P, films made from SiH_4 at different concentrations have a maximum refractive index and are below 2. According to the I-R measurement, it was proved that the film formed by the present method is a silicon nitride film. Under special conditions, get the exact chemical ratio of silicon nitride. Fluorescence spectroscopy indicates that SiH 4 is easily decomposed into Si atoms when activated nitrogen is present and that Si atoms and N atoms are present in a gaseous state during deposition.