NiFeCr/NiFe/Ta films with excellent performance were prepared by magnetron sputtering system.The anisotropic magetoresistance (AMR) value (ΔR/R) and magnetic filed sensitivity (Sv,Sv=[d(ΔR/R)/dH]max.) for the 12 nm NiFe film deposited on NiFeCr buffer layer were 3.66% and 1.42×10-4%·T-1,respectively.The higher Sv of the film is close to that of a spin valve (SV).The microstructure analysis shows that the NiFeCr buffer layer has adopted the same structure with the same interplanar distance as the NiFe layer,inducing a strong NiFe (111) texture,and that the NiFeCr/NiFe interface is quite smooth,leading to a high degree of specular reflection of conduction electrons.Both increase the ΔR and reduce the R in the film,which lead to the high ΔR/R.Clean substrate surfaces are critical for preparation of high performance NiFeCr/NiFe/Ta films,and sputter cleaning or pre-deposition of 5 nm amorphous Al2O3 layer in the deposition chamber can provide the re-quired clean substrate surfaces for the growth of the buffer layer. NiFeCr / NiFe / Ta films with excellent performance were prepared by magnetron sputtering system. The anisotropic magetoresistance (AMR) value (ΔR / R) and magnetic filed sensitivity (Sv, Sv = [d (ΔR / R) / dH] max. for the 12 nm NiFe film deposited on NiFeCr buffer layer were 3.66% and 1.42 × 10 -4% · T-1, respectively. These higher Sv of the film is close to that of a spin valve (SV). The microstructure analysis shows that the NiFeCr buffer layer has adopted the same structure with the same interplanar distance as the NiFe layer, inducing a strong NiFe (111) texture, and that the NiFeCr / NiFe interface is quite smooth, leading to a high degree of specular reflection of conduction electrons.Both increase the ΔR and reduce the R in the film, which lead to the high ΔR / R.Clean substrate surfaces are critical for preparation of high performance NiFeCr / NiFe / Ta films, and sputter cleaning or pre-deposition of 5 nm amorphous Al2O3 layer in the deposition chamber can provide the re-quired clean substrate surfaces for the growth of the buffer layer.