论文部分内容阅读
采用两步法制备Si基Ag/ZnO双层结构薄膜,研究了Ag覆盖层的厚度和生长温度T对ZnO近带边发光强度的影响.对于厚度为100nm的ZnO薄膜,发现Ag覆盖层的最佳厚度仅为8nm,此时双层薄膜相对于单层ZnO薄膜的发光增强因子η达到最大值8.1;同时还发现,在最佳Ag层厚度下,生长温度T≥300℃时生长Ag所获Ag/ZnO双层薄膜的ZnO发光强度比生长温度T≤200℃时生长的双层薄膜样品大一倍以上,η≈18.结合对双层薄膜表面形貌的测量,发现高生长温度下得到的双层薄膜样品的高η值可归因于高表面粗糙度导致高的外量子效率.
A two-step Si-based Ag / ZnO bilayer thin film was prepared and the effects of the thickness of the Ag cladding layer and the growth temperature T on the luminescence intensity near the ZnO band were investigated. For ZnO films with a thickness of 100 nm, Good thickness of only 8nm, double-layer thin film at this time relative to the single-layer ZnO thin film luminescence enhancement factor η reaches a maximum of 8.1; also found that the best Ag layer thickness, the growth temperature T ≥ 300 ℃ Ag The ZnO luminescence intensity of Ag / ZnO bilayer films was more than double that of bilayer films grown at T≤200 ℃, η≈18. Combining with the measurement of the surface morphology of bilayer films, it was found that the ZnO films with high growth temperature The high η value of the bilayer thin film samples can be attributed to the high surface roughness resulting in high external quantum efficiency.