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使用两种化学机械抛光剂得到的单层大马士革Cu导线表面起伏程度不同.扫描电镜观察到明显的缺陷出现在大起伏的Cu导线表面.这种表面缺陷导致早期失效比率剧增至几乎100%、电迁移寿命猛降至早期失效的量级、失效时间分布从多模变为单模,其相应的失效机制激活能为0.74±0.02eV,这说明失效主要是由Cu原子沿导线表面扩散引起的.最弱链接近似被用来分析单根Cu导线:Cu导线被适当均分为若干相互串联、失效机制不同的Cu块,任何一个Cu块的失效都会使整根Cu导线失效.分析结果表明,虽然表面缺陷不是最快的失效机制,但大起伏Cu导线的表面缺陷密度是另一种的10倍以上,这是其早期失效比率高和可靠性较低的主要原因.
The surface roughness of single-layer Damascus Cu wire obtained by using two chemical mechanical polishes is different, and the obvious defects observed on the surface of the Cu wire by the scanning electron microscopy resulted in the rapid increase of the early failure rate to almost 100% The electromigration lifetime plummeted to the order of early failure, and the failure time distribution changed from multimode to singlemode. The activation energy of the corresponding failure mechanism was 0.74 ± 0.02eV, indicating that the failure mainly caused by the diffusion of Cu atoms along the surface of the conductor . The weakest link approximation is used to analyze a single Cu conductor: the Cu conductor is properly split into a number of interconnected Cu, Cu failure of different mechanisms, any failure of a Cu block will make the entire Cu conductor failure.Results show that, Although the surface defect is not the fastest failure mechanism, the surface defect density of the large undulating Cu wire is more than 10 times that of the other one, which is the main reason for its high early failure rate and low reliability.